STP10P6F6 datasheet(5/15 Pages) STMICROELECTRONICS

Part #	STP10P6F6

Description	P-channel 60 V, 0.15 廓 typ., 10 A STripFET??VI DeepGATE??Power MOSFET in DPAK and TO-220 packages

PDF	15 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

5 / 15 page

STD10P6F6, STP10P6F6

Electrical characteristics

Doc ID 022967 Rev 2

5/15

Warning:

For the P-channel Power MOSFET the actual polarity of the

voltages and the current must be reversed.

Table 6.

Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

Rise time

VDD = 48 V, ID = 5 A,

RG = 4.7 Ω, VGS = 10 V

Figure 2

7.5

td(off)

Turn-off delay time

Fall time

16.5

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

Pulse width limited by safe operating area.

Source-drain current

Source-drain current (pulsed)

VSD

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 5 A, VGS = 0

1.1

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 10 A,

di/dt = 100 A/µs,

VDD = 48 V

Figure 4

STP10P6F6 Datasheet(PDF) 5 Page - STMicroelectronics

STP10P6F6 Datasheet(HTML) 5 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Datasheet Download

Link URL