ACE636B datasheet(2/5 Pages) ACE

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ACE636B

Common Drain Dual N-Channel Enhancement Mode Field Effect

VER 1.2

Ordering information

ACE636B XX + H

Electrical Characteristics

TA=25℃, unless otherwise noted.

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Off characteristics (Note 2)

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V, ID=250 uA

Gate Leakage Current

IGSS

VDS=0V,VGS=±12V

±100

Zero Gate Voltage Drain

Current

IDSS

VDS=20V, VGS=0V

On characteristics

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=250uA

0.6

1.2

Forward Transconductance

GFS

VDS=10V, ID=6A

Static Drain-Source

On-Resistance

RDS(ON)

VGS=4.5V, ID=6A

VGS=2.5V, ID=5.2A

Drain-Source Diode Characteristics And Maximum Ratings

Diode Forward Voltage

VSD

IS=2A, VGS=0V

0.5

0.77

Switching characteristics

Turn-On Delay Time

td(on)

RG=6Ω, VDD=10V, VGEN=4.5V,

ID=1A

Turn-Off Delay Time

td(off)

Dynamic characteristics

Input Capacitance

Ciss

VGS=0V, VDS=8V, f=1MHz

562

Output Capacitance

Coss

106

REVERSE Transfer

Capacitance

Crss

Total Gate Charge

VDS=10V, ID=6A, VGS=4.5V

4.86

Gate-Source Charge

QGS

0.92

Gate-Drain

QGD

1.4

Note: 2. Short duration test pulse used to minimize self-heating effect.

GM : SOT-23-6L

Pb - free

Halogen - free

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