ACE636B datasheet(1/5 Pages) ACE

Part #	ACE636B

Description	Common Drain Dual N-Channel Enhancement Mode Field Effect

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE636B

Common Drain Dual N-Channel Enhancement Mode Field Effect

VER 1.2

1

Description

Advanced trench process technology. High Density Cell Design For Ultra Low On-Resistance. High

Power and Current handing capability. Fully Characterized Avalanche Voltage and Current. Small Surface

Mount Package

Features

 V

DS 20V, ID =6A

 R

DS(ON)=22mΩ @VGS=4.5V

 R

DS(ON)=30mΩ @VGS=2.5V

 For a single mosfet

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±12

V

Drain Current (Note 1), Continuous

ID

6

A

Total Power Dissipation (Note1)

PD

650

mW

Operating and Storage Temperature Range TJ/TSTG -55/150

OC

Note: Mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.

Packaging Type

SOT-23-6L

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ACE636B Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

ACE636B Datasheet(HTML) 1 Page - ACE Technology Co., LTD.

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