ACE1550B datasheet(2/7 Pages) ACE

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ACE1550B

P-Channel Enhancement Mode Field Effect Transistor

VER 1.2

Ordering information

ACE1550B XX + H

Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V, ID=-250 uA

-20

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=-250uA

-0.3

-0.8

Gate Leakage Current

IGSS

VDS=0V,VGS=±12V

100

Zero Gate Voltage Drain

Current

IDSS

VDS=-20V, VGS=0V

Drain-Source On-Resistance

RDS(ON)

VGS=-4.5V, ID=-0.6A

500

620

VGS=-2.5V, ID=-0.5A

700

860

VGS=-1.8V, ID=-0.4A

1000

1450

Forward Transconductance

gfs

VDS=-10V,ID=-0.4A

Diode Forward Voltage

VSD

ISD=-0.15A, VGS=0V

-0.65

-1.2

Switching

Total Gate Charge

VDS=-10V, VGS=-4.5V, ID=-0.25A

1.0

1.3

Gate-Source Charge

Qgs

0.1

Gate-Drain Charge

Qgd

0.3

Turn-On Time

td(on)

VGS=-4.5V, ID=-0.2A, VDS=-10V,

RG=10Ω

Turn-Off Time

td(off)

Dynamic

Input Capacitance

Ciss

VGS=0V, VDS=-10V, f=1MHz

100

Output Capacitance

Coss

REVERSE Transfer

Capacitance

Crss

KM : SOT-523

Pb - free

Halogen - free

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