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ACE1557B Datasheet(PDF) 2 Page - ACE Technology Co., LTD.

Part # ACE1557B
Description  N-Channel Enhancement Mode Field Effect Transistor
PDF  5 Pages
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Manufacturer  ACE [ACE Technology Co., LTD.]
Direct Link  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

ACE1557B Datasheet(HTML) 2 Page - ACE Technology Co., LTD.

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ACE1557B
N-Channel Enhancement Mode Field Effect Transistor
VER 1.2
2
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V, ID=250 uA
30
34
V
Gate Threshold Voltage
VGS(th)
VDS=VGS, IDS=250uA
1
1.4
2
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
100
nA
Zero Gate Voltage Drain
Current
IDSS
VDS=24V, VGS=0V
1
uA
Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=4A
29
32
m
Ω
VGS=4.5V, ID=3A
41
51
Forward Transconductance
gfs
VDS=5V,ID=5A
15
S
Diode Forward Voltage
VSD
ISD=1A, VGS=0V
0.77
1.0
V
Maximum Body-Diode
Continuous Current
IS
4.3
A
Switching
Total Gate Charge
Qg
VDS=15V, VGS=10V, ID=5A
7.6
9.9
nC
Gate-Source Charge
Qgs
1.3
1.7
Gate-Drain Charge
Qgd
1.7
2.2
Turn-On Delay Time
td(on)
VGS=10V, RG=6Ω, VDS=15V,
RL=15Ω, ID=1A
10.1
20.3
nS
Turn-On Rise Time
Tr
3.2
6.3
Turn-Off Delay Time
td(off)
22.2
44.4
Turn-Off Fall Time
Tf
3
6
Dynamic
Input Capacitance
Ciss
VGS=0V, VDS=15V, f=1MHz
391
pF
Output Capacitance
Coss
86.2
REVERSE Transfer
Capacitance
Crss
59.4
Gate resistance
Rg
VGS=0V, VDS=0V, f=1MHz
1.4
2
Ω



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