ACE8212B datasheet(1/9 Pages) ACE

Part #	ACE8212B

Description	Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD

PDF	9 Pages

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Manufacturer	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE8212B

Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD

VER 1.2

1

Description

The ACE8212B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is

suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain

configuration.

Features

 V

DS(V)=20V

 I

D=8A (VGS=10V)

 TSSOP-8

RDS(ON)<13 mΩ (VGS=10V)

RDS(ON)<14 mΩ (VGS=4.5V)

RDS(ON)<19 mΩ (VGS=2.5V)

RDS(ON)<27 mΩ (VGS=1.8V)

 DFN2*5

RDS(ON)<13 mΩ (VGS=10V)

RDS(ON)<16 mΩ (VGS=4.5V)

RDS(ON)<22 mΩ (VGS=2.5V)

RDS(ON)<35 mΩ (VGS=1.8V)

 ESD Protected: 2000V

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±12

V

Continuous Drain Current *AC

TA=25℃

ID

8

A

TA=70℃

6.4

Pulsed Drain Current

IDM

30

A

Power Dissipation

TSSOP-8

TA=25℃

PD

1.5

W

TA=70℃

1

DFN2*5

TA=25℃

1.6

TA=70℃

1

Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150

OC

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ACE8212B Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

ACE8212B Datasheet(HTML) 1 Page - ACE Technology Co., LTD.

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