Advanced Power

N-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼ 100% Avalanche Test

600V

▼ Fast Switching Characteristics

5Ω

▼ Simple Drive Requirement

2A

Description

Absolute Maximum Ratings

Symbol

Units

Drain-Source Voltage

V

Gate-Source Voltage

V

A

Pulsed Drain Current

1

A

Total Power Dissipation

W

W/℃

Single Pulse Avalanche Energy

2

mJ

Avalanche Current

A

℃

Operating Junction Temperature Range

℃

Thermal Data

Symbol

Value

Units

Rthj-c

Maximum Thermal Resistance, Junction-case

6.25

℃/W

Rthj-a

Maximum Thermal Resistance, Junction-ambient

62

℃/W

Data & specifications subject to change without notice

RoHS-compliant Product

201019072-1/4

AP4002S/P

-55 to 150

Parameter

20

Parameter

Rating

600

±30

Storage Temperature Range

-55 to 150

8

20

Linear Derating Factor

0.16

2

2

G

D

S

G

D

S

TO-263(S)

G

D

S

TO-220(P)

Advanced Power MOSFETs from APEC provide the designer with

the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The TO-263 package is widely preferred for commercial-industrial

surface mount applications and suited for power applications.The

through-hole version (AP4002P) are available for low-profile applications.