Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Drain-Source Breakdown Voltage

600

-

-

V

Static Drain-Source On-Resistance

-

-

5

Ω

Gate Threshold Voltage

2

-

4

V

Forward Transconductance

-

1.5

-

S

-

-

100

uA

Gate-Source Leakage

-

-

±1

uA

Total Gate Charge

3

-

12

19

nC

Gate-Source Charge

-

2

-

nC

Gate-Drain ("Miller") Charge

-

5.5

-

nC

Turn-on Delay Time

3

-

10

-

ns

Rise Time

-

12

-

ns

Turn-off Delay Time

-

52

-

ns

Fall Time

-19

-

ns

Input Capacitance

-

375

600

pF

Output Capacitance

-

170

-

pF

Reverse Transfer Capacitance

f=1.0MHz

-

45

-

pF

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Forward On Voltage

3

-

-

1.5

V

Reverse Recovery Time

3

-

340

-

ns

Reverse Recovery Charge

dI/dt=100A/µs

-

2.2

-

µC

Notes:

1.Pulse width limited by Max. junction temperature.

3.Pulse test

2/4

AP4002S/P

THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.

THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

DEVICE OR SYSTEM ARE NOT AUTHORIZED.