© Semiconductor Components Industries, LLC, 2011

October, 2011 − Rev. 11

1

Publication Order Number:

TIP29B/D

TIP29, A, B, C (NPN),

TIP30, A, B, C (PNP)

Complementary Silicon

Plastic Power Transistors

Designed for use in general purpose amplifier and switching

applications. Compact TO−220 AB package.

Features

MAXIMUM RATINGS

Rating

Symbol

29

30

29A

30A

29B

30B

29C

30C

Unit

Collector − Emitter

Voltage

40

60

80

100

Vdc

Collector − Base Voltage

40

60

80

100

Vdc

Emitter − Base Voltage

5.0

Vdc

Collector Current

− Continuous

− Peak

1.0

3.0

Adc

Base Current

0.4

Adc

Total Power Dissipation

Derate above 25°C

30

0.24

W

W/°C

Total Power Dissipation

Derate above 25°C

2.0

0.016

W

W/°C

Unclamped Inductive

Load Energy (Note 1)

E

32

mJ

Operating and Storage

Junction Temperature

Range

– 65 to + 150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Ambient

62.5

°C/W

Thermal Resistance, Junction−to−Case

4.167 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1.8 A, P.R.F = 10 Hz

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−220AB

CASE 221A

STYLE 1

MARKING

DIAGRAM

1 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

40, 60, 80, 100 VOLTS,

80 WATTS

http://onsemi.com

1

2

3

4

TIPxxx

= Device Code:

29, 29A, 29B, 29C

30, 30A, 30B, 30C

A

= Assembly Location

Y

= Year

WW

= Work Week

G= Pb−Free Package

TIPxxxG

AYWW

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR