TIP30 datasheet(3/5 Pages) ONSEMI

3 / 5 page

TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0) (Note 2)

TIP29, TIP30

TIP29A, TIP30A

TIP29B, TIP30B

TIP29C, TIP30C

VCEO(sus)

100

−

Vdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)

TIP29, TIP29A, TIP30, TIP30A

(VCE = 60 Vdc, IB = 0)

TIP29B, TIP29C, TIP30B, TIP30C

ICEO

−

0.3

mAdc

Collector Cutoff Current

(VCE = 40 Vdc, VEB = 0)

TIP29, TIP30

(VCE = 60 Vdc, VEB = 0)

TIP29A, TIP30A

(VCE = 80 Vdc, VEB = 0)

TIP29B, TIP30B

(VCE = 100 Vdc, VEB = 0)

TIP29C, TIP30C

ICES

−

200

mAdc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

IEBO

−

1.0

mAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain (IC = 0.2 Adc, VCE = 4.0 Vdc)

DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)

hFE

−

Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 125 mAdc)

VCE(sat)

−

0.7

Vdc

Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc)

VBE(on)

−

1.3

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 3)

(IC = 200 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

3.0

−

MHz

Small−Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

−

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%

3. fT = ⎪hfe⎪• ftest

TIP30 Datasheet(PDF) 3 Page - ON Semiconductor

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