2N7002F_3

© Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet

Rev. 03 — 28 April 2006

2 of 12

Philips Semiconductors

2N7002F

N-channel TrenchMOS FET

3.

Ordering information

4.

Limiting values

Table 2:

Ordering information

Type number

Package

Name

Description

Version

2N7002F

TO-236AB

plastic surface-mounted package; 3 leads

SOT23

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

drain-source voltage

25

°C ≤ T

-

60

V

drain-gate voltage (DC)

25

°C ≤ T

-60

V

gate-source voltage

-

±30

V

peak gate-source voltage

-

±40

V

drain current

-

475

mA

-

300

mA

peak drain current

-

1.9

A

total power dissipation

-

0.83

W

storage temperature

−65

+150

°C

junction temperature

−65

+150

°C

Source-drain diode

source current

-

475

mA

peak source current

-

1.9

A