2N7002F_3

© Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet

Rev. 03 — 28 April 2006

8 of 12

Philips Semiconductors

2N7002F

N-channel TrenchMOS FET

Fig 13. Source current as a function of source-drain

voltage; typical values

Fig 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

03ai17

0

0.2

0.4

0.6

0.8

1

0.2

0.4

0.6

0.8

1

(A)

150

°C

03ai18

1

10

10

2

10

-1

1

10

10

2

C

(pF)