25AA160/25LC160/25C160

DS21231E-page 2

 1997-2012 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

Storage temperature .................................................................................................................................-65°C to 150°C

Ambient temperature under bias ...............................................................................................................-40°C to 125°C

Soldering temperature of leads (10 seconds) ....................................................................................................... +300°C

ESD protection on all pins ......................................................................................................................................... 4 KV

1.1

DC Characteristics

† NOTICE: Stresses above those listed under “Maximum ratings” may cause permanent damage to the device. This

is a stress rating only and functional operation of the device at those or any other conditions above those indicated in

the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended

period of time may affect device reliability.

DC CHARACTERISTICS

Industrial (I):

Param.

No.

Sym.

Characteristics

Min.

Max.

Units

Conditions

D1

High-level input

voltage

2.0

V

2.7V (Note)

D2

V

D3

Low-level input

voltage

-0.3

0.8

V

2.7V (Note)

D4

-0.3

D5

Low -level output

voltage

—0.4

V

D6

—0.2

V

D7

High-level output

voltage

—

V

A

D8

Input leakage current

-10

10

D9

Output leakage

current

-10

10

D10

Internal Capacitance

(all inputs and

outputs)

—7

pF

D11

Operating Current

—

—

1

500

mA

A

SO = Open

SO = Open

D12

—

—

5

3

mA

mA

D13

Standby Current

—

—

5

1

A

A

Note:

This parameter is periodically sampled and not 100% tested.