| Electronic Components Datasheet Search |
|
DTC646 Datasheet(PDF) 15 Page - Microchip Technology |
|
|
|||||||||||||||||||||||||||||
DTC646 Datasheet(HTML) 15 Page - Microchip Technology |
|
15 / 30 page ![]() 2002-2012 Microchip Technology Inc. DS21446D-page 15 TC646 FIGURE 5-8: Power the Fan from a -12V Supply. TABLE 5-2: TRANSISTORS AND MOSFETS FOR Q1 (VDD = 5V) 5.6 Latch-up Considerations As with any CMOS IC, the potential exists for latch-up if signals are applied to the device which are outside the power supply range. This is of particular concern during power-up if the external circuitry (such as the sensor network, VAS divider or shutdown circuit) is powered by a supply different from that of the TC646. Care should be taken to ensure that the TC646’s VDD supply powers up first. If possible, the networks attached to VIN and VAS should connect to the VDD sup- ply at the same physical location as the IC itself. Even if the IC and any external networks are powered by the same supply, physical separation of the connecting points can result in enough parasitic capacitance and/ or inductance in the power supply connections to delay one power supply “routing” versus another. 5.7 Power Supply Routing and Bypassing Noise present on the VIN and VAS inputs may cause erroneous operation of the FAULT output. As a result, these inputs should be bypassed with a 0.01 µF capacitor mounted as close to the package as possible. This is especially true of VIN, which is usually driven from a high impedance source (such as a thermistor). In addition, the VDD input should be bypassed with a 1 µF capacitor. Grounds should be kept as short as possible. To keep fan noise off the TC646 ground pin, individual ground returns for the TC646 and the low side of the fan current sense resistor should be used. Device Package Max. VBE(sat)/VGS (V) Min. HFE VCEO/VDS (V) Fan Current (mA) Suggested RBASE () MMBT2222A SOT-23 1.2 50 40 150 800 MPS2222A TO-92 1.2 50 40 150 800 MPS6602 TO-92 1.2 50 40 500 301 SI2302 SOT-23 2.5 NA 20 500 Note 1 MGSF1N02E SOT-23 2.5 NA 20 500 Note 1 SI4410 SO-8 4.5 NA 30 1000 Note 1 SI2308 SOT-23 4.5 NA 60 500 Note 1 Note 1: A series gate resistor may be used in order to control the MOSFET turn-on and turn-off times. GND +5V -12V Q1* VDD VOUT TC646 Fan R2* 2.2 k Ω R3* 2.2 Ω R4* 10 k Ω D1 12.0V Zener NOTE: *Value depends on the specific application and is shown for example only. |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |