MCP87090 datasheet(1/18 Pages) MICROCHIP

Part #	MCP87090

Description	High-Speed N-Channel Power MOSFET

PDF	18 Pages

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Manufacturer	MICROCHIP [Microchip Technology]

Direct Link	http://www.microchip.com

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 2013 Microchip Technology Inc.

DS22332A-page 1

MCP87090

Features:

• Low Drain-to-Source On Resistance (RDS(ON))

• Low Total Gate Charge (QG) and Gate-to-Drain

Charge (QGD)

• Low Series Gate Resistance (RG)

• Capable of Short Dead-Time Operation

• RoHS Compliant

Applications:

• Point-of-Load DC-DC Converters

• High Efficiency Power Management in Servers,

Networking, and Automotive Applications

Description:

The MCP87090 is an N-Channel power MOSFET in a

popular PDFN 5 mm x 6 mm package, as well as a

PDFN

3.3 mm x 3.3 mm

package.

Advanced

packaging and silicon processing technologies allow

the MCP87090 to achieve a low QG for a given RDS(ON)

value, resulting in a low Figure of Merit (FOM).

Combined with low RG, the low FOM of the MCP87090

device allows high efficiency power conversion with

reduced switching and conduction losses.

Package Type

Product Summary Table:

Unless otherwise indicated, TA = +25˚C

Parameters

Sym

Min

Typ

Max

Units

Conditions

Operating Characteristics

Drain-to-Source Breakdown Voltage

BVDSS

25

—

V

VGS = 0V, ID = 250 µA

Gate-to-Source Threshold Voltage

VGS(TH)

1.1

1.35

1.7

V

VDS = VGS, ID = 250 µA

Drain-to-Source On Resistance

RDS(ON)

—10

12

mΩ

VGS = 4.5V, ID = 17A

—

8.5

10.5

mΩ

VGS = 10V, ID = 17A

Total Gate Charge

QG

—

7.5

10

nC

VDS = 12.5V, ID = 17A, VGS = 4.5V

Gate-to-Drain Charge

QGD

—2.8

—

nC

VDS = 12.5V, ID = 17A

Series Gate Resistance

RG

—1.8

—

Ω

Thermal Characteristics

Thermal Resistance Junction-to-X, 8L 3.3x3.3-PDFN

RθJX

——

66

°C/W

Note 1

Thermal Resistance Junction-to-Case, 8L 3.3x3.3-PDFN

RθJC

——

3.5

°C/W

Note 2

Thermal Resistance Junction-to-X, 8L 5x6-PDFN

RθJX

——

56

°C/W

Note 1

Thermal Resistance Junction-to-Case, 8L 5x6-PDFN

RθJC

——

2.0

°C/W

Note 2

Note

1:

RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of 2 oz. copper.

This characteristic is dependent on user’s board design.

2:

RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.

PDFN 5 x 6

PDFN 3.3 x 3.3

SD

S

G

D

1

2

3

45

6

7

8

High-Speed N-Channel Power MOSFET

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