STL160N3LLH6 datasheet(4/16 Pages) STMICROELECTRONICS

Part #	STL160N3LLH6

Description	N-channel 30 V, 0.0011 廓, 35 A PowerFLAT??5x6 STripFET??VI DeepGATE??Power MOSFET

PDF	16 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 16 page

Electrical characteristics

STL160N3LLH6

4/16

Doc ID 18223 Rev 2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 30 V,

VDS = 30 V at TC = 125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 17.5 A

VGS= 4.5 V, ID= 17.5 A

0.0011

0.0016

0.0013

0.0020

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz,

VGS=0

6375

1230

675

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=15 V, ID = 35 A

VGS =4.5 V

(see Figure 14)

61.5

Gate input resistance

f=1 MHz gate DC bias = 0

test signal level = 20 mV

open drain

-1.4

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