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STL160N3LLH6 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STL160N3LLH6
Description  N-channel 30 V, 0.0011 廓, 35 A PowerFLAT??5x6 STripFET??VI DeepGATE??Power MOSFET
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL160N3LLH6 Datasheet(HTML) 5 Page - STMicroelectronics

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STL160N3LLH6
Electrical characteristics
Doc ID 18223 Rev 2
5/16
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD=15 V, ID= 17.5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 13)
-
18.5
32
107.5
54
-
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
35
A
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
140
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%.
Forward on voltage
ISD = 35 A, VGS=0
-
1.1
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 35 A,
di/dt = 100 A/µs,
VDD=25 V
-
37.2
36
1.9
ns
nC
A



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