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STS26N3LLH6 Datasheet(PDF) 7 Page - STMicroelectronics |
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STS26N3LLH6 Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 14 page ![]() STS26N3LLH6 Electrical characteristics Doc ID 019030 Rev 2 7/14 Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics VGS 6 4 2 0 0 20 Qg(nC) (V) 80 8 40 60 10 VDD=15V ID=26A 100 12 AM04980v1 C 3100 2100 1100 100 0 10 VDS(V) (pF) 5 4100 15 Ciss Coss Crss 20 25 5100 6100 AM04981v1 VGS(th) 0.6 0.4 0.2 0 -50 0 TJ(°C) (norm) -25 0.8 75 25 50 100 125 150 1.0 1.2 AM04982v1 RDS(on) 1.2 0.6 0.4 0 -50 0 TJ(°C) (norm) -25 75 25 50 100 125 150 0.2 0.8 1.0 1.4 1.6 AM04983v1 VSD 0 40 ISD(A) (V) 20 60 80 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TJ=-50°C TJ=25°C TJ=150°C AM04984v1 |
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