STS26N3LLH6 datasheet(1/14 Pages) STMICROELECTRONICS

Part #	STS26N3LLH6

Description	N-channel 30 V, 0.0038 Ω, 26 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET

PDF	14 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 14 page

October 2011

Doc ID 019030 Rev 2

1/14

14

STS26N3LLH6

N-channel 30 V, 0.0038

Ω, 26 A, SO-8

STripFET™ VI DeepGATE™ Power MOSFET

Features

■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)

■ High avalanche ruggedness

■ Low gate drive power losses

■ Very low switching gate charge

Applications

■ Switching applications

Description

This product utilizes the 6th generation of design

rules of ST’s proprietary STripFET™ technology,

with a new gate structure.The resulting Power

MOSFET exhibits the lowest RDS(on) in all

packages.

Figure 1.

Internal schematic diagram

Type

VDSS

RDS(on)

max

ID

STS26N3LLH6

30 V

0.0044

Ω

26 A

1

3

4

5

2

7 6

8

SO-8

Table 1.

Device summary

Order code

Marking

Packag

Packaging

STS26N3LLH6

26G3L

SO-8

Tape and reel

www.st.com

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STS26N3LLH6 Datasheet(PDF) 1 Page - STMicroelectronics

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