IXGR40N60C2 datasheet(2/6 Pages) IXYS

2 / 6 page

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol

Test Conditions

Characteristic Values

J = 25°C unless otherwise specified)

min.

typ.

max.

C = 30 A; VCE = 10 V,

Pulse test, t

≤ 300 μs, duty cycle ≤ 2 %

ies

2500

oes

CE = 25 V, VGE = 0 V, f = 1 MHz

40N60C2

180

40N60C2D1

220

res

C = 30 A, VGE = 15 V, VCE = 0.5 VCES

d(on)

n s

d(off)

140

n s

off

0.20

0.37 mJ

d(on)

n s

40N60C2

0.3

40N60C2D1

0.6

d(off)

130

n s

240

n s

off

0.50

thJ-DCB

(Note 1)

0.26

K/W

thJC

(Note 2)

0.74 K/W

thCS

0.15

K/W

Reverse Diode (FRED) (D1 Version Only)

Characteristic Values

J = 25°C unless otherwise specified)

Symbol

Test Conditions

min.

typ.

max.

F = 30 A, VGE = 0 V, Pulse test

J =150°C

1.6

≤ 300 μs, duty cycle d ≤ 2 %

J = 25°C

2.5

F = 30 A, VGE = 0 V, -diF/dt =100 A/μs, TJ = 100°C4

R = 100 V

100

n s

F = 1 A; -di/dt = 100 A/μs; VR = 30 V

n s

thJC

1.5 K/W

thCS

0.15

K/W

Inductive load, T

J = 25°

°°°°C

C = 30 A, VGE = 15 V

CE = 400 V, RG = Roff = 3 Ω

Inductive load, T

J = 125°

°°°°C

C = 30 A, VGE = 15 V

CE = 400 V, RG = Roff = 3 Ω

ISOPLUS 247 Outline

Notes:

1. R

thJ-DCB is the thermal resistance junction-to-internal side of DCB substrate

2. R

thJC is the thermal resistance junction-to-external side of DCB substrate

IXGR 40N60C2

IXGR 40N60C2D1

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6771478B2

IXGR40N60C2 Datasheet(PDF) 2 Page - IXYS Corporation

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