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IXTP98N075T Datasheet(PDF) 1 Page - IXYS Corporation |
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IXTP98N075T Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 2 page  © 2007 IXYS CORPORATION, All rights reserved TrenchMVTM Power MOSFET N-Channel Enhancement Mode IXTA98N075T IXTP98N075T V DSS =75 V I D25 =98 A R DS(on) ≤≤≤≤≤ 10 m Ω Ω Ω Ω Ω DS99541(04/07) G = Gate D = Drain S = Source TAB = Drain TO-263 (IXTA) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 175°C75 V V DGR T J = 25 °C to 175°C; R GS = 1 MΩ 75 V V GSM Transient ± 20 V I D25 T C = 25°C98 A I LRMS Package Current Limit (RMS): 75 A I DM T C = 25°C, pulse width limited by TJM 280 A dv/dt I S ≤ I DM, di/dt ≤ 100 A/μs, VDD ≤ VDSS 5 V/ns T J ≤ 175°C, R G = 5 Ω I AR T C = 25°C25 A E AS T C = 25°C 600 mJ P d T C = 25°C 230 W T J -55 ... +175 °C T JM 175 °C T stg -40 ... +175 °C T L 1.6 mm (0.062 in.) from case for 10 s 300 °C T SOLD Plastic body for 10 seconds 260 °C M d Mounting torque (TO-220) 1.13 / 10 Nm/lb.in. Weight TO-220 3.0 g TO-263 2.5 g Symbol Test Conditions Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ. Max. BV DSS V GS = 0 V, ID = 250 μA75 V V GS(th) V DS = V GS, ID = 100 μA 2.0 4.0 V I GSS V GS = ±20 V, VDS = 0 V ± 200 nA I DSS V DS = V DSS 2 μA V GS = 0 V T J = 150°C 150 μA R DS(on) V GS = 10 V, ID = 25 A, Notes 1, 2 10 m Ω G S TAB TAB G S Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications Advance Technical Information |
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