BC807-40 datasheet(5/19 Pages) NXP

5 / 19 page

BC807_BC807W_BC327_6

Product data sheet

Rev. 06 — 17 November 2009

5 of 19

NXP Semiconductors

BC807; BC807W; BC327

45 V, 500 mA PNP general-purpose transistors

Characteristics

[1]

Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

[2]

VBE decreases by approximately 2 mV/K with increasing temperature.

Table 8.

Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off current

IE = 0 A; VCB = −20 V

−100

IE = 0 A; VCB = −20 V;

Tj =150 °C

−5

μA

IEBO

emitter-base cut-off current

IC = 0 A; VEB = −5 V

−100

hFE

DC current gain

IC = −100 mA; VCE = −1 V

[1]

BC807; BC807W; BC327

100

600

BC807-16; BC807-16W;

BC327-16

100

250

BC807-25; BC807-25W;

BC327-25

160

400

BC807-40; BC807-40W;

BC327-40

250

600

hFE

DC current gain

IC = −500 mA; VCE = −1 V

[1] 40

VCEsat

collector-emitter saturation

voltage

IC = −500 mA; IB = −50 mA

[1] --

−700

VBE

base-emitter voltage

IC = −500 mA; VCE = −1 V

[2] --

−1.2

collector capacitance

IE = ie = 0 A; VCB = −10 V;

f=1MHz

-5

transition frequency

IC = −10 mA; VCE = −5 V;

f=100MHz

MHz

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