10/01/10

www.irf.com

1

IRLR2908PbF

IRLU2908PbF

Description

This HEXFET ® Power MOSFET utilizes the latest processing techniques

to achieve extremely low on-resistance per silicon area. Additional features

of this HEXFET power MOSFET are a 175°C junction operating temperature,

low R

θJC, fast switching speed and improved repetitive avalanche rating.

These features combine to make this design an extremely efficient and

reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor phase, infrared,

or wave soldering techniques. The straight lead version (IRFU series) is

for through-hole mounting applications. Power dissipation levels up to 1.5

watts are possible in typical surface mount applications.

S

D

G

D-Pak

IRLR2908PbF

Features

l

Advanced Process Technology

l

Ultra Low On-Resistance

l

Dynamic dv/dt Rating

l

175°C Operating Temperature

l

Fast Switching

l

Repetitive Avalanche Allowed up to Tjmax

l

Lead-Free

I-Pak

IRLU2908PbF

Absolute Maximum Ratings

Parameter

Units

A

Pulsed Drain Current

™

Maximum Power Dissipation

W

Linear Derating Factor

W/°C

Gate-to-Source Voltage

V

Single Pulse Avalanche Energy (Thermally Limited)

d

mJ

Single Pulse Avalanche Energy Tested Value

i

Avalanche Current

™

A

Repetitive Avalanche Energy

h

mJ

dv/dt

Peak Diode Recovery dv/dt

e

V/ns

Operating Junction and

°C

Storage Temperature Range

Soldering Temperature, for 10 seconds

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

1.3

°C/W

Junction-to-Ambient (PCB Mount)

jÃ

–––

40

Junction-to-Ambient

–––

110

120

0.77

± 16

180

250

See Fig.12a,12b,15,16

Max.

39

28

150

30

300 (1.6mm from case )

-55 to + 175

2.3

PD - 95552B