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STPS30M60CT Datasheet(PDF) 2 Page - STMicroelectronics

Part # STPS30M60CT
Description  Power Schottky rectifier
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS30M60CT Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
STPS30M60C
2/10
Doc ID 022020 Rev 1
1
Characteristics
When the two diodes 1 and 2 are used simultaneously:
ΔTj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 2.
Absolute ratings (limiting values, per diode, at Tamb = 25 °C unless
otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
60
V
IF(RMS) Forward rms current
60
A
IF(AV)
Average forward current,
δ = 0.5
Tc = 135 °C Per diode
15
A
Tc = 135 °C Per device
30
IFSM
Surge non repetitive forward current
tp = 10 ms sine-wave
400
A
PARM
(1)
1.
For temperature or pulse time duration deratings, please refer to Figure 4 and 5. More details regarding the
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.
Repetitive peak avalanche power
Tj = 25 °C, tp = 1 µs
17600
W
VARM
(2)
2.
See Figure 12
Maximum repetitive peak
avalanche voltage
tp < 1 µs, Tj < 150 °C, IAR < 66 A
80
V
VARM
(2)
Maximum single-pulse
peak avalanche voltage
tp < 1 µs, Tj < 150 °C, IAR < 66 A
80
V
Tstg
Storage temperature range
-65 to +175
°C
Tj
Maximum operating junction temperature(3)
3.
condition to avoid thermal runaway for a diode on its own heatsink
150
°C
Table 3.
Thermal parameters
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
per diode
1.3
°C/W
total
0.73
Rth(c)
Coupling
0.15
°C/W
dPtot
dTj
<
1
Rth(j-a)



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