STPS30M60CT datasheet(4/10 Pages) STMICROELECTRONICS

4 / 10 page

Characteristics

STPS30M60C

4/10

Doc ID 022020 Rev 1

Figure 6.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

Figure 7.

Relative thermal impedance

junction to case versus pulse

duration

I (A)

100

120

140

160

180

200

220

240

1.E-03

1.E-02

1.E-01

1.E+00

δ = 0.5

T = 25 °C

T = 75 °C

T = 125 °C

t(s)

Z/R

th(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

t (s)

Figure 8.

Reverse leakage current versus

reverse voltage applied

(typical values, per diode)

Figure 9.

Junction capacitance versus

reverse voltage applied

(typical values, per diode)

I (mA)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

010

V (V)

T = 25 °C

T = 50 °C

T = 75 °C

T = 125 °C

T = 150 °C

T = 100 °C

C(pF)

100

1000

10000

100

F = 1 MHz

= 30 mV

T = 25 °C

osc

RMS

V (V)

Figure 10.

Forward voltage drop versus

forward current (per diode)

Figure 11.

Thermal resistance junction to

ambient versus copper surface

under tab

(A)

0.1

1.0

10.0

100.0

1000.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

(V)

(Maximum values)

T = 125 °C

(Typical values)

T = 125 °C

(Maximum values)

T = 25 °C

DPAK

(°C/W)

th(j-a)

S (cm )

epoxy printed board copper thickness = 35 µm

STPS30M60CT Datasheet(PDF) 4 Page - STMicroelectronics

STPS30M60CT Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL