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PJC7404 Datasheet(PDF) 1 Page - Pan Jit International Inc. |
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PJC7404 Datasheet(HTML) 1 Page - Pan Jit International Inc. |
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1 / 6 page ![]() PPJC7404 July 11,2013-REV.00 Page 1 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V Current 1A SOT-323 Unit: inch(mm) Fig.160 Features RDS(ON) , VGS@4.5V, ID@1.0A<150mΩ RDS(ON) , VGS@2.5V, ID@0.7A<215mΩ RDS(ON) , VGS@1.8V, ID@0.3A<400mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected Lead free in comply with EU RoHS 2011/65/EU directives. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case : SOT-323 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.0002 ounces, 0.005 grams Marking : C04 PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS +8 V Continuous Drain Current ID 1 A Pulsed Drain Current (Note 4) IDM 4 A Power Dissipation Ta=25 oC PD 350 mW Derate above 25 oC 2.8 mW/ oC Operating Junction and Storage Temperature Range TJ,TSTG -55~150 oC Thermal resistance - Junction to Ambient (Note 3) RθJA 357 oC/W Maximum Ratings and Thermal Characteristics (TA=25 o C unless otherwise noted) |
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