© Semiconductor Components Industries, LLC, 2012

May, 2012 − Rev. 7

1

Publication Order Number:

TIP3055/D

TIP3055 (NPN),

TIP2955 (PNP)

Complementary Silicon

Power Transistors

Designed for general−purpose switching and amplifier applications.

Features

= 4.0 Adc

= 4.0 Adc

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

60

Vdc

Collector − Emitter Voltage

70

Vdc

Collector − Base Voltage

100

Vdc

Emitter − Base Voltage

7.0

Vdc

Collector Current − Continuous

1 5

Adc

Base Current

7.0

Adc

Derate above 25°C

90

0.72

W

W/°C

Operating and Storage Junction

Temperature Range

– 65 to

+ 150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

1.39

°C/W

Thermal Resistance, Junction−to−Ambient

35.7

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

15 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

60 VOLTS, 90 WATTS

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

SOT−93 (TO−218)

CASE 340D

STYLE 1

TO−247

CASE 340L

STYLE 3

NOTE: Effective June 2012 this device will

be available only in the TO−247

package. Reference FPCN# 16827.