TIP2955 datasheet(4/6 Pages) ONSEMI

4 / 6 page

TIP3055 (NPN), TIP2955 (PNP)

http://onsemi.com

TIP3055

TIP2955

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.1

100

1000

1.0

2.0

0.3

7.0

VCE = 4.0 V

TJ = 25°C

0.2

0.5 0.7

3.0

5.0

0.1

0.3

2.0

3.0

Figure 2. Maximum Rated Forward Bias

Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0

2.0

4.0

6.0

0.2

0.5

1.0

100

SECONDARY BREAKDOWN LIMIT

BONDING WIRE LIMIT

THERMAL LIMIT @ TC = 25°C

TJ = 150°C

300

1.0ms

10ms

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 2 is based on TC = 25°C; TJ(pk) is

variable depending on power level. Second breakdown

pulse limits are valid for duty cycles to 10% but must be

derated for temperature.

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