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TPS2104DBVT Datasheet(PDF) 12 Page - Texas Instruments |
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TPS2104DBVT Datasheet(HTML) 12 Page - Texas Instruments |
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12 / 19 page ![]() TPS2104, TPS2105 VAUX POWER-DISTRIBUTION SWITCHES SLVS235A – SEPTEMBER 1999 – REVISED APRIL 2000 12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TYPICAL CHARACTERISTICS Figure 17 280 240 200 –40 –10 20 50 320 IN1-OUT ON-STATE RESISTANCE vs JUNCTION TEMPERATURE 360 80 110 140 TJ – Junction Temperature – °C VI(IN1) = 2.7 V VI(IN1) = 3.3 V VI(IN1) = 4 V VI(IN1) = 5 V VI(IN1) = 5.5 V Figure 18 1.5 1 0.5 –40 –10 20 50 2 2.5 IN2-OUT ON-STATE RESISTANCE vs JUNCTION TEMPERATURE 3 80 110 140 VI(IN2) = 3.3 V VI(IN2) = 2.7 V TJ – Junction Temperature – °C VI(IN2) = 5.5 V VI(IN2) = 5 V VI(IN2) = 4 V APPLICATION INFORMATION EN IN1 IN2 OUT GND 5 V VAUX 5 V VCC CardBus or System Controller TPS2104 0.22 µF 0.22 µF 1 µF xx µF 5 V Figure 19. Typical Application power-supply considerations A 0.22- µF ceramic bypass capacitor between IN and GND, close to the device is recommended. The output capacitor should be chosen based on the size of the load during the transition of the switch. A 220- µF capacitor is recommended for 100-mA loads. Typical output capacitors (xx µF, shown in Figure 19) required for a given load can be determined from Figure 11 which shows the output voltage droop when output is switched from IN2 to IN1. The output voltage droop is insignificant when output is switched from IN1 to IN2. Additionally, bypassing the output with a 1- µF ceramic capacitor improves the immunity of the device to short-circuit transients. |
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