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STP95N3LLH6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP95N3LLH6 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 18 page ![]() November 2009 Doc ID 15228 Rev 3 1/18 18 STB95N3LLH6, STD95N3LLH6 STP95N3LLH6, STU95N3LLH6 N-channel 30 V, 0.0037 Ω , 80 A, D2PAK, DPAK, IPAK, TO-220 STripFET™ VI DeepGATE™ Power MOSFET Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses Application ■ Switching applications Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Figure 1. Internal schematic diagram Type VDSS RDS(on) max ID STB95N3LLH6 30 V 0.0042 Ω 80 A STD95N3LLH6 30 V 0.0042 Ω 80 A STP95N3LLH6 30 V 0.0042 Ω 80 A STU95N3LLH6 30 V 0.0047 Ω 80 A DPAK 1 3 3 2 1 IPAK 1 3 D²PAK 1 2 3 TO-220 AM01474v1 D (TAB or 2) G(1) S(3) Table 1. Device summary Order codes Marking Package Packaging STB95N3LLH6 95N3LLH6 D²PAK Tape and reel STD95N3LLH6 95N3LLH6 DPAK Tape and reel STP95N3LLH6 95N3LLH6 TO-220 Tube STU95N3LLH6 95N3LLH6 IPAK Tube www.st.com |
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