STP95N3LLH6 datasheet(4/18 Pages) STMICROELECTRONICS

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Electrical characteristics

STx95N3LLH6

4/18

Doc ID 15228 Rev 3

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

Voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 30 V

VDS = 30 V,Tc = 125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2.5

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 40 A

SMD version

0.0037 0.0042

Ω

VGS = 10 V, ID = 40 A

0.0042 0.0047

Ω

VGS = 4.5 V, ID = 40 A

SMD version

0.0055

0.007

Ω

VGS = 4.5 V, ID = 40 A

0.006

0.0075

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz,

VGS = 0

2200

400

280

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 15 V, ID = 80 A

VGS = 4.5 V

Figure 13

8.2

7.5

Qgs1

Qgs2

Pre Vth gate-to-source

charge

Post Vth gate-to-source

charge

VDD = 15 V, ID = 80 A

Figure 18

3.4

6.2

Gate input resistance

f = 1 MHz gate bias

Bias = 0 test signal

level = 20 mV

open drain

-1

Ω

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