STF4N62K3 datasheet(3/19 Pages) STMICROELECTRONICS

3 / 19 page

STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3

Electrical ratings

Doc ID 17548 Rev 4

3/19

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220FP

I²PAKFP

I²PAK

TO-220

IPAK

VDS

Drain-source voltage

620

VGS

Gate- source voltage

± 30

Drain current (continuous) at TC = 25 °C

3.8 (1)

Limited by maximum junction temperature.

3.8

Drain current (continuous) at TC = 100 °C

2 (1)

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

15.2 (1)

15.2

PTOT

Total dissipation at TC = 25 °C

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

3.8

EAS

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 50V)

115

ESD

Gate-source human body model (R = 1.5

Ω, C = 100 pF)

2.5

dv/dt (3)

ISD ≤ 3.8 A, di/dt = 400 A/µs, VDD = 80% V(BR)DSS, VDS peak ≤ V(BR)DSS.

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220FP

I²PAKFP

I²PAK

TO-220

IPAK

Rthj-case Thermal resistance junction-case max

1.79

°C/W

Rthj-amb Thermal resistance junction-ambient max

62.5

°C/W

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