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2N5686 Datasheet(PDF) 3 Page - ON Semiconductor |
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2N5686 Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 5 page ![]() 2N5684 (PNP), 2N5686 (NPN) http://onsemi.com 3 Figure 4. Thermal Response t, TIME (ms) 1.0 0.01 0.02 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 2000 500 θJC(t) = r(t) θJC θJC = 0.584°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) θJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 D = 0.5 0.05 0.02 0.01 SINGLE PULSE 0.1 1000 0.2 100 1.0 Figure 5. Active-Region Safe Operating Area VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 50 20 10 5.0 0.1 2.0 3.0 7.0 10 20 30 50 100 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) 70 2.0 TJ = 200°C CURVES APPLY BELOW RATED VCEO dc 1.0 ms 500 μs 1.0 0.5 0.2 5.0 100 μs 5.0 ms 2N5684, 2N5686 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 4.0 0.5 Figure 6. Turn-Off Time IC, COLLECTOR CURRENT (AMP) 2.0 1.0 0.6 0.4 0.2 0.7 1.0 2.0 3.0 7.0 20 50 TJ = 25°C IB1 = IB2 IC/IB = 10 VCE = 30 V 0.3 ts 5.0 5000 0.1 Figure 7. Capacitance VR, REVERSE VOLTAGE (VOLTS) 500 2.0 5.0 10 20 100 50 0.2 0.5 1.0 3000 1000 700 TJ = 25°C 0.8 3.0 30 2000 10 2N5684 (PNP) 2N5686 (NPN) tf Cib 2N5684 (PNP) 2N5686 (NPN) Cob Cob Cib |
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