IRF7905PbF

4

www.irf.com

Q1 - Control FET

Q2 - Synchronous FET

Typical Characteristics

Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Capacitance vs. Drain-to-Source Voltage

Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage

Fig 10. Typical Gate Charge vs. Gate-to-Source

Voltage

Fig 11. Maximum Safe Operating Area

Fig 12. Maximum Safe Operating Area

1

10

100

VDS, Drain-to-Source Voltage (V)

10

100

1000

10000

Coss

Crss

Ciss

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

02468

10

QG Total Gate Charge (nC)

0

2

4

6

8

10

12

VDS= 25V

VDS= 16V

VDS= 7.6V

ID= 6.3A

0.01

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

1000

TA = 25°C

Tj = 150°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µsec

100msec

1

10

100

VDS, Drain-to-Source Voltage (V)

10

100

1000

10000

Coss

Crss

Ciss

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

0

4

8

12

16

QG, Total Gate Charge (nC)

0

2

4

6

8

10

12

VDS= 25V

VDS= 16V

VDS= 7.6V

ID= 7.1A

0.01

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

1000

TA = 25°C

Tj = 150°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µsec

100msec