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LTC4555

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ELECTRICAL CHARACTERISTICS

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliability and lifetime.

Note 2: The LTC4555E is guaranteed to meet performance speciﬁcations

from 0°C to 85°C. Speciﬁcations over the –40°C to 85°C operating

temperature range are assured by design, characterization and correlation

with statistical process controls.

The

l denotes the speciﬁcations which apply over the full operating

temperature range, otherwise speciﬁcations are at TA = 25°C.

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

High Level Input Current (IIH)DATA

–20

μA

Low Level Input Current (IIL)

DATA

1mA

High Level Output Voltage (VOH)DATA IOH = 20μA, I/O = VCC

l 0.7 × DVCC

Low Level Output Voltage (VOL)DATA IOL = –200μA, I/O = 0V

0.4

DATA Pull-Up Resistance

Between DATA and DVCC

kΩ

SIM Inputs/Outputs (VCC = 3V)

High Level Output Voltage (VOH)

I/O, IOH = 20μA, DATA = DVCC

0.8

× VCC

Low Level Output Voltage (VOL)

I/O, IOL = –1mA, DATA = 0V

0.4

High Level Output Voltage (VOH)

RST, CLK, IOH = 20μA

0.9

× VCC

Low Level Output Voltage (VOL)

RST, CLK, IOL = –200μA

0.4

I/O Pull-Up Resistance

Between I/O and VCC

6.5

kΩ

SIM Inputs/Outputs (VCC = 1.8V)

High Level Output Voltage (VOH)

I/O, IOH = 20μA, DATA = DVCC

0.8

× VCC

Low Level Output Voltage (VOL)

I/O, IOL = –1mA, DATA = 0V

0.3

High Level Output Voltage (VOH)

RST, CLK, IOH = 20μA

0.9

× VCC

Low Level Output Voltage (VOL)

RST, CLK, IOL = –200μA

0.2

× VCC

I/O Pull-Up Resistance

Between I/O and VCC

6.5

kΩ

SIM Timing Parameters

CLK Rise/Fall Time

CCLK = 30pF, VCC = 1.8V/3V

RST, I/O Rise/Fall Time

RST, I/O Loaded with 30pF, VCC = 1.8V/3V

1μs

Max CLK Frequency

5MHz

VCC Turn-On Time

SHDN = 1, (Note 3)

0.5

VCC Discharge Time to 1V

SHDN = 0, (Note 3)

0.5

Note 3: Speciﬁcation is guaranteed by design and not 100% tested in

production.

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