CHA7012

X-band High Power Amplifier

Ref. : DSCHA70129082- 23 March 09

2/10

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics

Tamb = 20°C, Vc=7.5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20%

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency

9.2

10.4

GHz

G

Small signal gain

17.5

20

23

dB

G_T

Small signal gain variation versus

temperature

-0.025

dB/°C

RLin

Input Return Loss

8

10

dB

RLout

Output Return Loss

8

12

dB

Psat

Saturated output power

39.5

dBm

Psat_T

Saturated output power variation versus

temperature

-0.01

dB/°C

P_3dBc

Output power @ 3dBc (3)

38

38.5

dBm

PAE_3dBc

Power Added Efficiency @ 3dBc

34

38

%

Vc

Power supply voltage (3)

7.5

8

V

Ic

Power supply quiescent current (1)

1.9

A

TI

TTL input voltage

0

5

V

I_TI

TTL input current

1

mA

Vctrl

Collector control voltage

5

V

Zctr

Vctrl input port impedance (2)

350

Ohm

Top

Operating temperature range

-40

+80

°C

(1)

Parameter tunable by Vctrl when control biasing circuit used.

(2)

This value corresponds to the 4 ports in parallel (Pin 4, 8, 14, 18)

(3)

0.5V variation on Vc leads to around 0.4dB variation of the output power (impact on

robustness see Maximum ratings)

Tamb = 20°C

Symbol

Parameter

Values

Unit

Cmp

Compression level (2)

6

dBc

Vc

Power supply voltage with RF

8

V

Ic

Power supply quiescent current

2.8

A

Ic_sat

Power supply current in saturation

3.5

A

Vctrl

Collector current control voltage

6.5

V

Tj

Maximum junction temperature

175

°C

Tstg

Storage temperature range

-55 to +125

°C

(1) Operation of this device above anyone of these parameters may cause permanent damage.

(2) For higher compression the level limit can be increased by decreasing the voltage Vc using

the rate 0.5 V / dBc

Equivalent Thermal resistance to Backside: 6°C/W