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2N3019 Datasheet(PDF) 2 Page - Comset Semiconductor

Part # 2N3019
Description  SILICON PLANAR EPITAXIAL TRANSISTORS
PDF  4 Pages
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Manufacturer  COMSET [Comset Semiconductor]
Direct Link  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

2N3019 Datasheet(HTML) 2 Page - Comset Semiconductor

  2N3019 Datasheet HTML 1Page - Comset Semiconductor 2N3019 Datasheet HTML 2Page - Comset Semiconductor 2N3019 Datasheet HTML 3Page - Comset Semiconductor 2N3019 Datasheet HTML 4Page - Comset Semiconductor  
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NPN 2N3019 – 2N3020
16/10/2012
COMSET SEMICONDUCTORS
2/4
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
Unit
ICBO
Collector Cutoff Current
VCB =950 V
IE =0
2N3019
-
-
10
nA
2N3020
VCB =90 V, IE =0
Tj =150°C
2N3019
-
-
10
µA
2N3020
IEBO
Emitter Cutoff Current
VEB =5 V
IC =0
2N3019
-
-
10
nA
2N3020
VCEO
Collector Emitter Breakdown
Voltage
IC =10 mA
IB =0
2N3019
80
-
-
V
2N3020
VCBO
Collector Base Breakdown
Voltage
IC =100 µA
IE =0
2N3019
140
-
-
V
2N3020
VEBO
Emitter Base Breakdown
Voltage
IE =100 µA
IC =0
2N3019
7
-
-
V
2N3020
hFE
DC Current Gain (*)
IC =0.1 mA
VCE =10 V
2N3019
50
-
-
-
2N3020
30
-
100
IC =10 mA
VCE =10 V
2N3019
90
-
-
2N3020
40
-
120
IC =150 mA
VCE =10 V
2N3019
100
-
300
2N3020
40
-
120
IC =500 mA
VCE =10 V
2N3019
50
-
-
2N3020
30
-
100
IC =1 A
VCE =10 V
2N3019
15
-
-
2N3020
IC =150 mA
VCE =10 V
Tamb = -55°C
2N3019
40
-
-
VCE(SAT)
Collector-Emitter saturation
Voltage (*)
IC =150 mA
IB =15 mA
2N3019
-
-
0.2
V
2N3020
IC =500 mA
IB =50 mA
2N3019
-
-
0.5
2N3020
VBE(SAT)
Base-Emitter saturation
Voltage (*)
IC =150 mA
IB =15 mA
2N3019
-
-
1.1



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