2N6052 datasheet(2/3 Pages) COMSET

2 / 3 page

PNP 2N6050 – 2N6051 – 2N6052

17/10/2012

COMSET SEMICONDUCTORS

2 | 3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

MAx Unit

ICEX

Collector Cutoff

Current

VCE= VCEX =-60 V, VBE=1.5 V

2N6050

-500

µA

VCE= VCEX =-80 V, VBE=1.5 V

2N6051

VCE= VCEX =-100 V

VBE=1.5 V

2N6052

VCE= VCEX =-60 V, VBE=1.5 V

TC=150°C

2N6050

-5

VCE= VCEX =-80 V, VBE=1.5 V

TC=150°C

2N6051

VCE= VCEX =-100 V

VBE=1.5 V, TC=150°C

2N6052

ICEO

Collector Cutoff

Current

VCE=-30 Vdc, IB=0

2N6050

-1.0

VCE=-40 Vdc, IB=0

2N6051

VCE=-50 Vdc, IB=0

2N6052

IEBO

Emitter Cutoff

Current

VEB=-5 V

2N6050

-2.0

2N6051

2N6052

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

(*)

IC=-0.1 A

2N6050

-60

2N6051

-80

2N6052

-100

VCE(SAT)

Collector-Emitter

saturation Voltage

(*)

IC=-6 A, IB=-24 mA

2N6050

-2.0

2N6051

2N6052

IC=-12 A, IB=-120 mA

2N6050

-3.0

2N6051

2N6052

VBE(SAT)

Base-Emitter

Saturation Voltage

(*)

IC=-12 A, IB=-120 mA

2N6050

-4

2N6051

2N6052

VBE(ON)

Base-Emitter

Voltage (*)

IC=-6 A, VCE=-3 V

2N6050

-2.8

2N6051

2N6052

Transition

Frequency

IC=-5 A, VCE=-3 V, f=1 MHz

2N6050

MHz

2N6051

2N6052

hFE

DC Current Gain

(*)

VCE=-3 V, IC=-6.0 A

2N6050

750

18000

2N6051

2N6052

VCE=-3.0 V, IC=-12 A

2N6050

100

2N6051

2N6052

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

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