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2N6253 Datasheet(PDF) 1 Page - Comset Semiconductor |
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2N6253 Datasheet(HTML) 1 Page - Comset Semiconductor |
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1 / 4 page ![]() NPN 2N6253 – 2N6254 – 2N6371 09/11/2012 COMSET SEMICONDUCTORS 1 | 4 H HIIG GH H P PO OW WE ER R S SIIL LIIC CO ON N N NP PN N TRANSISTORS The 2N6253, 2N6254, and 2N6371 are silicon transistors are mounted in TO-3 metal package. Tey are intended for a wide variety of high-power applications. The construction of these devices renders them highly resistant to second breakdown over a wide range of operating conditions. These devices differ in maximum ratings for voltage and power dissipation. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO(SUS) Collector-Emitter Voltage 2N6253 45 V 2N6254 80 2N6371 40 VCBO Collector-Base Voltage (*) 2N6253 55 V 2N6254 100 2N6371 50 VCER(SUS) Collector-Emitter Voltage RBE=100Ω 2N6253 55 V 2N6254 85 2N6371 45 VCEV(SUS) Collector-Emitter Voltage VBE=-1.5V 2N6253 55 V 2N6254 90 2N6371 50 VEBO Emitter-Base Voltage 2N6253 5 V 2N6254 7 2N6371 5 IC Collector Current 15 A IB Base Current 7 A PTOT Power Dissipation < 25°C 2N6253 115 Watts 2N6254 150 2N6371 117 > 25°C Derate Linearly to 200°C TJ Junction Temperature -65 to +200 °C TS Storage Temperature |
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