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BD136 Datasheet(PDF) 2 Page - Comset Semiconductor |
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BD136 Datasheet(HTML) 2 Page - Comset Semiconductor |
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2 / 3 page ![]() NPN BD136 – BD138 – BD140 15/10/2012 COMSET SEMICONDUCTORS 2 | 3 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit -ICBO Collector cut-off current IE=0, -VCB= 30 V BD135 - - 0,1 µA BD137 - - 0,1 BD139 - - 0,1 IE=0, -VCB = 30V Tj= 125°C BD135 - - 10 BD137 - - 10 BD139 - - 10 -IEBO Emitter cut-offcurrent IC=0, -VEB=5 V - - 10 µA -VCEO(SUS) Collector-Emitter sustaning Voltage (*) IB=0, -IC=30 mA BD135 45 - - V BD137 60 - - BD139 80 - - -VCE(SAT) Collector-Emitter saturation Voltage (*) -IC=0.5 A, -IB=50 mA - - 0,5 V hFE DC Current Gain (*) -VCE=2 V, -IC=5 mA 25 - - -VCE=2 V -IC=150 mA BDxxx 40 - 250 BDxxx -10 63 - 160 BDxxx -16 100 - 250 -VCE=2 V, -IC=500 mA 25 - - -VBE Base-Emitter Voltage(*) -VCE=2 V, -IC=500 mA - - 1 V fT Transition frequency -VCE=5 V, -IC=50 mA f= 35 MHz - 75 - MHz (*) Measured under pulse conditions :tP <300µs, δ <2%. |
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