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BDV67B Datasheet(PDF) 3 Page - Comset Semiconductor

Part # BDV67B
Description  NPN SILICON DARLINGTONS POWER TRANSISTORS
PDF  5 Pages
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Manufacturer  COMSET [Comset Semiconductor]
Direct Link  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

BDV67B Datasheet(HTML) 3 Page - Comset Semiconductor

  BDV67B Datasheet HTML 1Page - Comset Semiconductor BDV67B Datasheet HTML 2Page - Comset Semiconductor BDV67B Datasheet HTML 3Page - Comset Semiconductor BDV67B Datasheet HTML 4Page - Comset Semiconductor BDV67B Datasheet HTML 5Page - Comset Semiconductor  
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BDV67-A-B-C-D
26/09/2012
COMSET SEMICONDUCTORS
3/5
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Mx
Unit
ICEO
Collector Cutoff
Current
VCE= 30 V, IB= 0
BDV67
-
-
1
mA
VCE= 40 V, IB= 0
BDV67A
-
-
VCE= 50 V, IB= 0
BDV67B
-
-
VCE= 60 V, IB= 0
BDV67C
-
-
VCE= 75 V, IB= 0
BDV67D
-
-
IEBO
Emitter Cutoff Current
VBE= 5 V, Ic= 0
BDV67
-
-
5.0
mA
BDV67A
-
-
BDV67B
-
-
BDV67C
-
-
BDV67D
-
-
ICBO
Collector-Base Cutoff
Current
IB= 0
Tj=25°C
VCB= 80 V
BDV67
-
-
1
mA
VCB= 100 V BDV67A
-
-
VCB= 120 V BDV67B
-
-
VCB= 140 V BDV67C
-
-
VCB= 160 V BDV67D
-
-
IB= 0
Tj=150°
C
VCB= 40 V
BDV67
-
-
4
VCB= 50 V
BDV67A
-
-
VCB= 60 V
BDV67B
-
-
VCB= 70 V
BDV67C
-
-
VCB= 80 V
BDV67D
-
-
VCEO
Collector-emitter
Breakdown Voltage (*)
IC= 30 mA, IB= 0
BDV67
60
-
-
V
BDV67A
80
-
-
BDV67B
100
-
-
BDV67C
120
-
-
BDV67D
150
-
-
hFE
DC Current Gain (*)
VCE= 3 V, IC= 1 A
BDV67
BDV67A
BDV67B
BDV67C
BDV67D
-
3000
-
-
VCE= 3 V, IC= 10 A
1000
-
-
VCE= 3 V, IC= 16 A
-
1000
-
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
IC= 10 A, IB= 40 mA
BDV67
-
-
2
V
BDV67A
BDV67B
BDV67C
BDV67D



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