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BUX40 Datasheet(PDF) 1 Page - Comset Semiconductor |
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BUX40 Datasheet(HTML) 1 Page - Comset Semiconductor |
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1 / 3 page ![]() NPN BUX40 COMSET SEMICONDUCTORS 1/3 H HIIG GH H C CU UR RR RE EN NT T,, H HIIG GH H S SP PE EE ED D,, H HIIG GH H P PO OW WE ER R T TR RA AN NS SIIS ST TO OR R The BUX41 is silicon multiepitaxial planar NPN transistor in Jedec TO-3. They are intended for use in switching and linear applications in military and industrial equipment. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage IB = 0 125 V VCBO Collector-Base Voltage IE = 0 160 V VEBO Emitter-Base Voltage IC = 0 7 V VCEX Collector-Emitter Voltage VBE = -1.5V 160 V VCER Collector-Emitter Voltage RBE = 100Ω 150 V IC Collector Current 20 A ICM Collector Peak Current tp = 10ms 28 A IB Base Current 4 A Pt Total Power Dissipation @ TC = 25° 120 Watts TJ Junction Temperature 200 °C TStg Storage Temperature -65 to +200 °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJC Thermal Resistance, Junction to Case 1.46 °C/W |
Similar Part No. - BUX40 |
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Similar Description - BUX40 |
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