BUX40 datasheet(2/3 Pages) COMSET

2 / 3 page

NPN BUX40

26/10/2012

COMSET SEMICONDUCTORS

3/3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCEO(SUS)

Collector-Emitter Sustaining

Voltage (*)

IC=200 mA

125

VEB0

Emitter-Base Voltage

IC=0A , IE=50 mA

ICEO

Collector Cutoff Current

VCE=100 V , IB=0A

ICEX

Collector Cutoff Current

VCE= VCEX, VBE= -1.5V

Tcase = 125°C

IEBO

Emitter Cutoff Current

VEB=5.0 V, IC=0

hFE

DC Current Gain (*)

IC=10 A , VCE=4.0 V

IC=15 A , VCE=4.0 V

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

IC=10 A , IB=1 A

0.6

1.2

IC=15 A , IB=1.88 A

0.9

1.6

VBE(SAT)

Base-Emitter saturation Voltage (*) IC=15 A , IB=1.88 A

1.7

IS/B

Second breakdown collector

current

VCE=30 V , ts = 1s

VCE=50 V , ts = 1s

ES/B

Clamped ES/B Collector current

Vclamp=125 V

L=500 µH

Transition frequency

VCE=15 V , IC=1 A

f=10 MHz

MHz

ton

Turn-on time

IC=15 A , IB=1.88 A

VCC=30 V

0.35

1.2

µs

Storage time

IC=15 A , VCC=30 V

IB1 = -IB2 =1.88 A

0.85

File time

0.14

0.4

(*) Pulse Duration = 300

µs, Duty Cycle <= 2%

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