ES2A datasheet(2/2 Pages) YEASHIN

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REV.02 20120705

ES2A Thru ES2J

DEVICE CHARACTERISTICS

NOTE:1.Rise Time = 7ns max.

Input Impedance = 1 megohm.

22pF

2.Rise Time = 10ns max.

Source Impedance = 50 Ohms

trr

+0.5A

-0.25

-1.0

SET TIME

1cm

BASE FOR

50 ns/cm

2.4

2.0

1.6

1.2

0.8

0.4

100

120

140

160

SINGLE PHASE HALF

WAVE 60Hz RESISTIVE

OR INDUCTIVE LOAD

P.C.B. MOUNTED ON

0.3×0.3"(8.0×8.0mm)

COPPER PAD AREAS

LEAD TEMPERATURE,

Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND

TEST CIRCUIT DIAGRAM

Fig. 2-MAXIMUM AVERAGE FORWARD

CURRENT RATING

100

120

140

1,000

100

0.1

0.01

J = 100

J = 75

J = 25

PERCENT OF RATED PEAK INVERSE VOLTAGE, VOLTS

50.0

10.0

1.0

0.1

0.01

0.4

0.5

0.8

1.0

1.2

1.4

1.6

1.8

ES2A

ES2E

ES2J

TJ = 25

PULSE WIDTH = 300 s

2% DUTY CYCLE

REVERSE VOLTAGE, VOLTS

Fig. 3-TYPICAL REVERSE CHARACTERISTICS

Fig. 4-TYPICAL FORWARD CHARACTERISTICS

100

8.3ms SINGLE HALF SINE WAVE

JEDEC METHOD

NUMBER OF CYCLES AT 60Hz

100 200

500

1000

TJ = 25

f = 1.0MHz

Vsig = 50mVp-p

REVERSE VOLTAGE, VOLTS

Fig. 5-MAXIMUM NON-REPETITIVE PEAK FORWARD

SURGE CURRENT

Fig. 6-TYPICAL JUNCTION CAPACITANCE

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