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BLF178XR Datasheet(PDF) 7 Page - NXP Semiconductors |
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BLF178XR Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 14 page ![]() BLF178XR_BLF178XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 4 — 12 July 2013 7 of 14 NXP Semiconductors BLF178XR; BLF178XRS Power LDMOS transistor 7.4 Graphical data The following figures are measured in a class-AB production test circuit. 7.4.1 1-Tone CW pulsed VDS = 50 V; IDq = 40 mA; f = 108 MHz; tp = 100 s; =20%. VDS = 50 V; IDq = 40 mA; f = 108 MHz; tp = 100 s; =20%. (1) PL(1dB) = 61.3 dBm (1350 W) (2) PL(3dB) = 61.9 dBm (1550 W) Fig 5. Power gain and drain efficiency as function of output power; typical values Fig 6. Output power as a function of input power; typical values |
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