BLF178XR datasheet(8/14 Pages) PHILIPS

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BLF178XR_BLF178XRS

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Product data sheet

Rev. 4 — 12 July 2013

8 of 14

NXP Semiconductors

BLF178XR; BLF178XRS

Power LDMOS transistor

VDS = 50 V; f = 108 MHz; tp = 100 s;  =20%.

(1) IDq =20mA

(2) IDq =40mA

(3) IDq =80mA

(4) IDq = 160 mA

VDS = 50 V; f = 108 MHz; tp = 100 s;  =20 %.

(1) IDq =20mA

(2) IDq =40mA

(3) IDq =80mA

(4) IDq = 160 mA

Fig 7.

Power gain as a function of output power;

typical values

Fig 8.

Drain efficiency as a function of output power;

typical values

IDq = 40 mA; f = 108 MHz; tp = 100 s;  =20%.

(1) VDS =20V

(2) VDS =25V

(3) VDS =30V

(4) VDS =35V

(5) VDS =40V

(6) VDS =45V

(7) VDS =50V

IDq = 40 mA; f = 108 MHz; tp = 100 s;  =20 %.

(1) VDS =20V

(2) VDS =25V

(3) VDS =30V

(4) VDS =35V

(5) VDS =40V

(6) VDS =45V

(7) VDS =50V

Fig 9.

Power gain as a function of output power;

typical values

Fig 10. Drain efficiency as a function of output power;

typical values

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