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LMC662CM Datasheet(PDF) 1 Page - Texas Instruments

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Part # LMC662CM
Description  LMC662 CMOS Dual Operational Amplifier
PDF  23 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

LMC662CM Datasheet(HTML) 1 Page - Texas Instruments

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LMC662
www.ti.com
SNOSC51C – APRIL 1998 – REVISED MARCH 2013
LMC662 CMOS Dual Operational Amplifier
Check for Samples: LMC662
1
FEATURES
DESCRIPTION
The LMC662 CMOS Dual operational amplifier is
2
•
Rail-to-Rail Output Swing
ideal for operation from a single supply. It operates
•
Specified for 2 k
Ω and 600Ω Loads
from +5V to +15V and features rail-to-rail output
•
High Voltage Gain: 126 dB
swing in addition to an input common-mode range
that includes ground. Performance limitations that
•
Low Input Offset Voltage: 3 mV
have plagued CMOS amplifiers in the past are not a
•
Low Offset Voltage Drift: 1.3
μV/°C
problem with this design. Input VOS, drift, and
•
Ultra Low Input Bias Current: 2 fA
broadband noise as well as voltage gain into realistic
loads (2 k
Ω and 600Ω) are all equal to or better than
•
Input Common-Mode Range Includes V−
widely accepted bipolar equivalents.
•
Operating Range from +5V to +15V Supply
This chip is built with TI's advanced Double-Poly
•
ISS = 400 μA/amplifier; Independent of V+
Silicon-Gate CMOS process.
•
Low Distortion: 0.01% at 10 kHz
See the LMC660 datasheet for a Quad CMOS
•
Slew Rate: 1.1 V/
μs
operational amplifier with these same features.
APPLICATIONS
•
High-Impedance Buffer or Preamplifier
•
Precision Current-to-Voltage Converter
•
Long-Term Integrator
•
Sample-and-Hold Circuit
•
Peak Detector
•
Medical Instrumentation
•
Industrial Controls
•
Automotive Sensors
Connection Diagram
Typical Application
Figure 1. 8-Pin PDIP, SOIC
Figure 2. Low-Leakage Sample-and-Hold
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 1998–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.


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