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TLP2168 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TLP2168 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 13 page ![]() TLP2168 1 Photocouplers GaAℓAs Infrared LED & Photo IC TLP2168 TLP2168 TLP2168 TLP2168 1. 1. 1. 1. Applications Applications Applications Applications • Plasma Display Panels (PDPs) • Factory Automation (FA) • Measuring Instruments 2. 2. 2. 2. General General General General The TLP2168 consists of high-intensity GaAℓAs infrared light-emitting diodes (LEDs) optically coupled to a high- gain, high-speed photoreceptor chip. The TLP2168 guarantees operation at up to 125 and on supplies from 2.7 V to 5.5 V. It is offered in the SO8 package. With two LED-photoreceptor pairs, the TLP2168 helps save board space. An internal noise shield provides superior common-mode rejection for improved noise immunity. 3. 3. 3. 3. Features Features Features Features (1) Inverter logic type (open collector output) (2) Package: SO8 (3) Operating temperature: -40 to 125 (4) Supply voltage: 2.7 to 5.5 V (5) Data transfer rate: 20 MBd (typ.)(NRZ) (6) Threshold input current: 5.0 mA (max) (7) Supply current: 8 mA (max) (8) Common-mode transient immunity: ±15 kV/µs (min) (9) Isolation voltage: 2500 Vrms (min) (10) Safety standards UL-approved: UL1577 File No.E67349 cUL-approved: CSA Component Acceptance Service No.5A, File No.E67349 VDE-approved: Option (V4) EN60747-5-2 (Note) Note: When an EN60747-5-2 approved type is needed, please designate the Option (V4) Option (V4) Option (V4) Option (V4). 4. 4. 4. 4. Packaging and Pin Configuration Packaging and Pin Configuration Packaging and Pin Configuration Packaging and Pin Configuration 11-5K1S 1: Anode 1 2: Cathode 1 3: Cathode 2 4: Anode 2 5: GND 6: VO2 (Output 2) 7: VO1 (Output 1) 8: VCC 2012-08-08 Rev.3.0 |
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