STP5NK52ZD datasheet(3/17 Pages) STMICROELECTRONICS

3 / 17 page

STB5NK52ZD-1, STD/F/P5NK52ZD

Electrical ratings

3/17

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

I²PAK

IPAK

DPAK

TO-220FP

VDS

Drain-source voltage (VGS = 0)

520

VGS

Gate- source voltage

± 30

Drain current (continuous) at TC = 25 °C

4.4

4.4 (1)

Limited only by max temperature allowed

Drain current (continuous) at TC = 100 °C

2.7

2.7 (1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

17.6

17.6 (1)

PTOT

Total dissipation at TC = 25 °C

Derating factor

0.56

0.2

W/°C

VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5 kΩ)

2800

dv/dt (3)

ISD ≤ 4.4 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS

Peak diode recovery voltage slope

V/ns

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220

I²PAK

IPAK

DPAK

TO-220FP

Rthj-case Thermal resistance junction-case max

1.78

°C/W

Rthj-amb Thermal resistance junction-ambient max

62.5

100

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

4.4

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

170

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