LM5109A

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SNVS412A – APRIL 2006 – REVISED MARCH 2013

LM5109A High Voltage 1A Peak Half Bridge Gate Driver

Check for Samples: LM5109A

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FEATURES

DESCRIPTION

The LM5109A is a cost effective, high voltage gate

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•

Drives Both a High-Side and Low-Side N-

driver designed to drive both the high-side and the

Channel MOSFET

low-side N-Channel MOSFETs in a synchronous

•

1A peak Output Current (1.0A Sink / 1.0A

buck or a half bridge configuration. The floating high-

Source)

side driver is capable of working with rail voltages up

to 90V. The outputs are independently controlled with

•

Independent TTL Compatible Inputs

TTL compatible input thresholds. The robust level

•

Bootstrap Supply Voltage to 108V DC

shift

technology

operates

at

high

speed

while

•

Fast Propagation Times (30 ns Typical)

consuming low power and providing clean level

•

Drives 1000 pF Load with 15ns Rise and Fall

transitions from the control input logic to the high-side

gate driver. Under-voltage lockout is provided on both

Times

the low-side and the high-side power rails. The

•

Excellent Propagation Delay Matching (2 ns

device is available in the SOIC and the thermally

Typical)

enhanced WSON packages.

•

Supply Rail Under-Voltage Lockout

•

Low Power Consumption

Package

•

Pin Compatible with ISL6700

•

SOIC

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WSON-8 (4 mm x 4 mm)

TYPICAL APPLICATIONS

•

Current Fed Push-Pull Converters

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Half and Full Bridge Power Converters

•

Solid State Motor Drives

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Two Switch Forward Power Converters

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Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

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PRODUCTION DATA information is current as of publication date.

Copyright © 2006–2013, Texas Instruments Incorporated

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.